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HT45B0C mosfet gate driver block diagram rev. 1.00 1 december 21, 2006 features three low side and high side mosfet driver low side drive supply range from 9v~20v with low voltage protection high side driver output maximum voltage is 80v input logic supply range from 4.5v~5.5v low voltage protection function 24-pin skdip/sop package general description the devices are for power mosfet gate drivers, which interface directly to driver the power mosfet. there are three high side drivers and three low side drivers to driver six n-channel power mosfet. the high side driver operates up to 80 volts. the input logic power is from vdd, so it can easy to interface with microcontroller.

technical document tools information faqs application note
pin assignment pin description pin name i/o description vdat vdbt vdct upper side power mosfet gate driver positive power supply at bt ct o high side high voltage drive output vsat vsbt vsct upper side power mosfet gate driver negative power supply ab bb cb o low side high voltage drive output atl btl ctl i logic input for high side gate driver output (at, bt, ct) abl bbl cbl i logic input for low side gate driver output (ab, bb, cb) vm low side driver power supply and power supply for vdat/vsat, vdbt/vsbt, vdct/vsct charging capacitors vdd logic power supply vss negative power supply, ground HT45B0C rev. 1.00 2 december 21, 2006 ! " " # " $ " % " & " ' " ! " " ! ' & % $ # " " " " ( (

absolute maximum ratings vdd supply voltage ............................................................................................................... ....v ss 0.3v to v ss +6.0v vm supply voltage ................................................................................................................ ......v ss 0.3v to v ss +20v vdat, vdbt, vdct supply voltage ............................................................................................v ss 0.3v to v ss +80v vsat, vsbt, vsct supply voltage .............................................................................................v ss 0.3v to v ss +70v input voltage ................................................................................................................... ...........v ss 0.3v to v dd +0.3v storage temperature ............................ 50 cto125 c operating temperature........................... 40 cto85 c i ol total ..............................................................150ma i oh total............................................................ 100ma total power dissipation .....................................500mw note: these are stress ratings only. stresses exceeding the range specified under absolute maximum ratings may cause substantial damage to the device. functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability. d.c. characteristics ta=25 c symbol parameter test conditions min. typ. max. unit v dd conditions v dd operating voltage 4.5 5.5 v v m low side driver power supply v lvh 20 v v lvh v m low voltage protection voltage high going 8 9 10 v v lvl v m low voltage protection voltage low going 7 8 9 v i dd v dd operating current 5v no load 12ma i vm v m operating current v m =20v 0.5 1 ma v il input low voltage for atl, btl, ctl, abl , bbl , cbl 5v 0 0.3v dd v v ih input high voltage for atl, btl, ctl, abl , bbl , cbl 5v 0.7v dd v dd v i ol at, ab, bt, bb, ct and cb sink current v m and vdxt vsxt=15v, v ol =1.5v 25 40 ma i oh at, ab, bt, bb, ct and cb source current v m and vdxt vsxt=15v, v oh =13.5v 12.5 20 ma i ols at, ab, bt, bb, ct and cb output low short circuit pulsed current vm and vdxt vsxt=15v, v o =15v, v in =v il , pulse width 10 s 380 ma i ohs at, ab, bt, bb, ct and cb output high short circuit pulsed current vm and vdxt vsxt=15v, v o =0v, v in =v ih , pulse width 10 s 165 ma r ph pull-high resistance of abl , bbl , cbl 5v 10 30 50 k r pl pull-low resistance of atl, btl, ctl 5v 10 30 50 k note: vdxt is vdat, vdbt or vdct vsxt is vsat, vsbt or vsct the i ols and i ohs parameters have been characterised but not 100% production tested. HT45B0C rev. 1.00 3 december 21, 2006
a.c. characteristics ta=25 c symbol parameter test conditions min. typ. max. unit v dd v m conditions t on turn-on propagation delay 5v 15v c l =1000pf, vdxt vsxt=15v, vdxt=80v 250 ns t off turn-off propagation delay 5v 15v c l =1000pf, vdxt vsxt=15v, vdxt=80v 150 ns t r turn-on rising time 5v 15v c l =1000pf, vdxt vsxt=15v, vdxt=80v 250 ns t f turn-off falling time 5v 15v c l =1000pf, vdxt vsxt=15v, vdxt=80v 120 ns t in input pulse width for atl, btl, ctl, abl , bbl , cbl 5v 15v 200 ns note: vdxt is vdat, vdbt or vdct vsxt is vsat, vsbt or vsct HT45B0C rev. 1.00 4 december 21, 2006 ' ) ' ) * ( * + + # ) # ) " ) " ) + * ( * + + # ) # ) " ) " ) + , , ' ) ' ) - - - - note: x is a, b or c
timing diagrams note: xisa,borc HT45B0C rev. 1.00 5 december 21, 2006 functional description input/output truth table the output of the device is according the input pin. the true table is as follow: atl, btl, ctl abl , bbl , cbl low voltage protection at, bt, ct ab, bb, cb 0 1 n vsat, vsbt, vsct vss, vss, vss 0 0 n vsat, vsbt, vsct vm, vm, vm 1 1 n vdat, vdbt, vdct vss, vss, vss 1 0 n vsat, vsbt, vsct vss, vss, vss y vsat, vsbt, vsct vss, vss, vss (atl, abl ), (btl, bbl ) and (ctl, cbl ) truth table - - - -
package information 24-pin skdip (300mil) outline dimensions symbol dimensions in mil min. nom. max. a 1235 1265 b 255 265 c 125 135 d 125 145 e16 20 f50 70 g 100 h 295 315 i 345 360 0 15 HT45B0C rev. 1.00 6 december 21, 2006 ! " " " . + / 0
24-pin sop (300mil) outline dimensions symbol dimensions in mil min. nom. max. a 394 419 b 290 300 c14 20 c
590 614 d92 104 e 50 f4 g32 38 h4 12 0 10 HT45B0C rev. 1.00 7 december 21, 2006 ! " " " . + 1 /
product tape and reel specifications reel dimensions sop 24w symbol description dimensions in mm a reel outer diameter 330 1 b reel inner diameter 62 1.5 c spindle hole diameter 13+0.5 0.2 d key slit width 2 0.5 t1 space between flange 24.8+0.3 0.2 t2 reel thickness 30.2 0.2 HT45B0C rev. 1.00 8 december 21, 2006 "
carrier tape dimensions sop 24w symbol description dimensions in mm w carrier tape width 24 0.3 p cavity pitch 12 0.1 e perforation position 1.75 0.1 f cavity to perforation (width direction) 11.5 0.1 d perforation diameter 1.55+0.1 d1 cavity hole diameter 1.5+0.25 p0 perforation pitch 4 0.1 p1 cavity to perforation (length direction) 2 0.1 a0 cavity length 10.9 0.1 b0 cavity width 15.9 0.1 k0 cavity depth 3.1 0.1 t carrier tape thickness 0.35 0.05 c cover tape width 21.3 HT45B0C rev. 1.00 9 december 21, 2006 " 2 " . + 3
HT45B0C rev. 1.00 10 december 21, 2006 copyright 2006 by holtek semiconductor inc. the information appearing in this data sheet is believed to be accurate at the time of publication. however, holtek as - sumes no responsibility arising from the use of the specifications described. the applications mentioned herein are used solely for the purpose of illustration and holtek makes no warranty or representation that such applications will be suitable without further modification, nor recommends the use of its products for application that may present a risk to human life due to malfunction or otherwise. holtek
s products are not authorized for use as critical components in life support devices or systems. holtek reserves the right to alter its products without prior notification. for the most up-to-date information, please visit our web site at http://www.holtek.com.tw. holtek semiconductor inc. (headquarters) no.3, creation rd. ii, science park, hsinchu, taiwan tel: 886-3-563-1999 fax: 886-3-563-1189 http://www.holtek.com.tw holtek semiconductor inc. (taipei sales office) 4f-2, no. 3-2, yuanqu st., nankang software park, taipei 115, taiwan tel: 886-2-2655-7070 fax: 886-2-2655-7373 fax: 886-2-2655-7383 (international sales hotline) holtek semiconductor inc. (shanghai sales office) 7th floor, building 2, no.889, yi shan rd., shanghai, china 200233 tel: 86-21-6485-5560 fax: 86-21-6485-0313 http://www.holtek.com.cn holtek semiconductor inc. (shenzhen sales office) 5/f, unit a, productivity building, cross of science m 3rd road and gaoxin m 2nd road, science park, nanshan district, shenzhen, china 518057 tel: 86-755-8616-9908, 86-755-8616-9308 fax: 86-755-8616-9533 holtek semiconductor inc. (beijing sales office) suite 1721, jinyu tower, a129 west xuan wu men street, xicheng district, beijing, china 100031 tel: 86-10-6641-0030, 86-10-6641-7751, 86-10-6641-7752 fax: 86-10-6641-0125 holtek semiconductor inc. (chengdu sales office) 709, building 3, champagne plaza, no.97 dongda street, chengdu, sichuan, china 610016 tel: 86-28-6653-6590 fax: 86-28-6653-6591 holmate semiconductor, inc. (north america sales office) 46729 fremont blvd., fremont, ca 94538 tel: 1-510-252-9880 fax: 1-510-252-9885 http://www.holmate.com

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